technical data multiple (quad) pnp silicon switching transistor qualified per mil - prf - 19500/558 devices qualified level 2n6987 2n6987u 2n6988 jan jantx jantxv jans maximum ratings (1) ratings symbol value units collector - emitter voltage ( 4) v ceo 60 vdc collector - base voltage (4) v cbo 60 vdc emitter - base voltage (4) v ebo 5.0 vdc collector current i c 600 madc total power dissipation @ t a = +25 0 c 2n6987 (2) 2n6987u (2) 2n6988 (3) p t 1.5 1.0 0.4 w operating & storage junction temperature range t op , t stg - 65 to +200 0 c 1) maximum voltage between transistors shall be 3 500 vdc 2) derate linearly 8.57 mw/ 0 c above t a = +25 0 c 3) derate linearly 2.286 mw/ 0 c above t a = +25 0 c. 4) ratings apply to each transistor in the array. 2n6987* to - 116 2n6987u* 20 pin leadless 2n6988* 14 pin flat pack *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteri stics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 10 madc v (br)ceo 60 vdc collector - base cutoff current v cb = 60 vdc v cb = 50 vdc i cbo 10 10 m adc h adc emitter - base cutoff current v be = 5.0 vd c v eb = 3.5 vdc i ebo 10 50 m adc h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n6987, 2n6988 jan, series electrical characteristic s (con?t) characteristics symbol min. max. unit on characteristics forward - current transfer ratio i c = 0.1 madc, v ce = 10 vdc i c = 1.0 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc i c = 500 madc, v ce =1 0 vdc h fe 75 100 100 100 50 450 300 collector - emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v ce(sat) 0.4 1.6 vdc base - emitter voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v be(sat) 1.3 2.6 vdc dynamic characteristics magnitude of small - signal short - circuit forward - current transfer ratio i c = 50 madc, v ce = 20 vdc, f = 100 mhz ? h fe ? 2.0 8.0 small - signal short - circuit forward current transfer ratio i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz h fe 100 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 8.0 pf input capacitance v eb = 2.0 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 30 pf 6 lake street, lawre nce, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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